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Ordering number : EN7681B
2SK3703
N-Channel Power MOSFET
60V, 30A, 26m Ω , TO-220F-3SG
Features
http://onsemi.com
?
?
ON-resistance RDS(on)1=20m Ω (typ.)
4V drive
?
Input capacitance Ciss=1780pF (typ.)
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
60
±20
30
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
120
2.0
25
150
--55 to +150
135
30
A
W
W
° C
° C
mJ
A
Note : * 1 VDD=20V, L=200 μ H, IAV=30A (Fig.1)
* 2 L ≤ 200 μ H, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7529-001
Product & Package Information
? Package : TO-220F-3SG
? JEITA, JEDEC : SC-67
? Minimum Packing Quantity : 50 pcs./magazine
10.16
4.7
2SK3703-1E
3.18
2.54
Marking
Electrical Connection
2
A
2.76
K3703
LOT No.
1
1.47 MAX
0.8
DETAIL-A
(0.84)
3
1
2
3
0.5
1 : Gate
EMC
FRAME
2 : Drain
3 : Source
2.54
2.54
TO-220F-3SG
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813 No.7681-1/7
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